FQA30N40
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明MOSFET N-CH 400V 30A TO3PN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)30 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min400 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)290 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)1400 mJ
- Drain-source On Resistance-Max0.14 ohm
- Pulsed Drain Current-Max (IDM)120 A
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FQA30N40