RF MICRO DEVICES INC FPM2750QFN | 搜芯易Sourcengine

RF MICRO DEVICES INC FPM2750QFN

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
5A991.G
ECCN Governance
EAR
HTS Code
8542.33.00.01
SB Code
8542.33.00.00

Application
AMPLIFIER
JESD-30 Code
S-PQCC-N16
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
J-STD-609 Code
e3
Operating Mode
DEPLETION MODE
Terminal Finish
Matte Tin (Sn) - annealed
DLA Qualification
Not Qualified
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
16
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
6
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
1
Time@Peak Reflow Temperature-Max (s)
30