COMPOUND PHOTONICS FPD7612P70-100 | 搜芯易Sourcengine

COMPOUND PHOTONICS FPD7612P70-100

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
JESD-609 Code
e4
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Finish
GOLD
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
19 dB
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
8 V
Moisture Sensitivity Level
1
Transistor Element Material
SILICON