RF MICRO DEVICES INC FPD7612 | 搜芯易Sourcengine

RF MICRO DEVICES INC FPD7612

生命周期状态
Transferred
说明
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.40
SB Code
8541.21.00.40

Application
AMPLIFIER
JESD-30 Code
R-XUUC-N
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
8
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
0.5