RF MICRO DEVICES INC FPD750SOT89CE | 搜芯易Sourcengine

RF MICRO DEVICES INC FPD750SOT89CE

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
J-STD-609 Code
e3
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
Matte Tin (Sn) - annealed
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Moisture Sensitivity Level
2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
8
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
1.8
Time@Peak Reflow Temperature-Max (s)
40