Qorvo, Inc FPD750SOT343ESR | 搜芯易Sourcengine

Qorvo, Inc FPD750SOT343ESR

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
6 V
Transistor Element Material
GALLIUM ARSENIDE