RF MICRO DEVICES INC FPD6836SOT343ESB | 搜芯易Sourcengine

RF MICRO DEVICES INC FPD6836SOT343ESB

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
5A991.G
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.95

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
17
Moisture Sensitivity Level
1
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
6
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
0.7