RF MICRO DEVICES INC FPD6836P70 | 搜芯易Sourcengine

RF MICRO DEVICES INC FPD6836P70

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
5A991.G
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.95

Application
AMPLIFIER
JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Power Gain-Min (Gp) (dB)
14
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
8
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
0.55