RF MICRO DEVICES INC FPD6836 | 搜芯易Sourcengine

RF MICRO DEVICES INC FPD6836

生命周期状态
Transferred
说明
RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.40
SB Code
8541.29.00.40

Application
AMPLIFIER
JESD-30 Code
R-XUUC-N
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
10
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
1.2