RF MICRO DEVICES INC FPD3000SOT89E | 搜芯易Sourcengine

RF MICRO DEVICES INC FPD3000SOT89E

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
5A991.G
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.95

JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
8 V
Operating Temperature-Max
175 Cel
Transistor Element Material
GALLIUM ARSENIDE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
3.5 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED