RF MICRO DEVICES INC FPD1500SOT89 | 搜芯易Sourcengine

RF MICRO DEVICES INC FPD1500SOT89

生命周期状态
Transferred
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
0.55
Moisture Sensitivity Level
2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
8
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
2.3