RF MICRO DEVICES INC FPD1000ASSQ | 搜芯易Sourcengine

RF MICRO DEVICES INC FPD1000ASSQ

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-XQMW-F4
Configuration
SINGLE
JESD-609 Code
e4
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Finish
GOLD
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
12 V
Operating Temperature-Max
175 Cel
Moisture Sensitivity Level
1
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
6 W