INFINEON TECHNOLOGIES AG FP25R12W2T7_B11 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FP25R12W2T7_B11

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT Modules LOW POWER EASY
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X23
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
7
Number of Terminals
23
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
56
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
380
Collector Current-Max (IC) (A)
25
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.45
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
IEC-61140