INFINEON TECHNOLOGIES AG FP25R12W2T7 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FP25R12W2T7

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
1.74
Case Connection
ISOLATED
Polarity/Channel Type
N-Channel
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
74
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
670
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.45
Collector-emitter Voltage-Max (V)
1200