FILTRONIC SOLID STATE INC FP2250QFN-1 | 搜芯易Sourcengine

FILTRONIC SOLID STATE INC FP2250QFN-1

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CQCC-N4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
6 V
Transistor Element Material
GALLIUM ARSENIDE