TRIQUINT SEMICONDUCTOR INC FP1189-G | 搜芯易Sourcengine

TRIQUINT SEMICONDUCTOR INC FP1189-G

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, TO-243AA
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-243AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HIGH ELECTRON MOBILITY
J-STD-609 Code
e4
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
NICKEL PALLADIUM GOLD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Drain Current-Max (ID) (A)
0.125
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
160