FNNB16A1T1KDMAFJ4-AS
Micron Technology
- 生命周期状态Active-Unconfirmed
- 说明Flash, 128GX8, 25ns, PBGA132
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeTLC NAND TYPE
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitYES
- Width (mm)12
- Length (mm)18
- Data PollingYES
- JESD-30 CodeR-PBGA-B132
- Memory Width8
- Package CodeVBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- Page Size (words)16K
- Terminal PositionBOTTOM
- Memory Organization128GX8
- Number of Functions1
- Number of Terminals132
- Sector Size (words)36K
- Terminal Pitch (mm)1
- Access Time-Max (ns)25
- Number of Words Code128G
- Memory Density (bits)1099511627776
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size4032
- Output Characteristics3-STATE
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)2.7
- Supply Voltage-Nom (V)3.3
- Number of Words (words)137438953472
- Programming Voltage (V)12
- Standby Current-Max (A)0.00035
- Supply Current-Max (mA)52
- Package Equivalence CodeBGA132,11X17,40
- Endurance (Write/Erase Cycles)10000
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)-10
- Write Cycle Time-Max (tWC) (ms)25
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