FM50DY-10S
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 50A I(D), 500V, 0.17ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationCOMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Number of Elements2
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)50 A
- DS Breakdown Voltage-Min500 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.17 ohm
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FM50DY-10S