FM30DY-10
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 30A I(D), 500V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PUFM-X7
- ConfigurationSERIES, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)30 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min500 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.3 ohm
- Pulsed Drain Current-Max (IDM)90 A
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FM30DY-10