Fujitsu Limited FLX257XV | 搜芯易Sourcengine

Fujitsu Limited FLX257XV

生命周期状态
Transferred
说明
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.40
SB Code
8541.29.00.40

JESD-30 Code
R-XUUC-N
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
15
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
15