Fujitsu Limited FLR016FH | 搜芯易Sourcengine

Fujitsu Limited FLR016FH

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
S-MQFP-F4
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
SQUARE
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
QUAD
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
K BAND
DS Breakdown Voltage-Min
12 V
Operating Temperature-Max
175 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
1 W