Renesas Technology Corp. FK10VS-10 | 搜芯易Sourcengine

Renesas Technology Corp. FK10VS-10

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
10
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Pulsed Drain Current-Max (IDM) (A)
30
Drain-source On Resistance-Max (ohm)
1.13