FHX35LGT/002
Sumitomo Electric Industries, Ltd.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明RF Small Signal Field-Effect Transistor, Silicon, N-Channel, High Electron Mobility FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Polarity/Channel TypeN-CHANNEL
- DS Breakdown Voltage-Min4 V
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
FHX35LGT/002有0家供应商货源可供购买或竞价
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FHX35LGT/002
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FHX35LGT/002