SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC FHX13LG | 搜芯易Sourcengine

SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC FHX13LG

生命周期状态
Discontinued
说明
GaAs HEMTs, BS/CS LNA, 0.45dB, 12GHz
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
RADIAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Power Gain-Min (Gp) (dB)
11
Drain Current-Max (ID) (A)
0.06
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
3.5
Operating Temperature-Max (Cel)
175