ASI Semiconductor, Inc. FH2164 | 搜芯易Sourcengine

ASI Semiconductor, Inc. FH2164

生命周期状态
Active
说明
SILICON N-CHANNEL RF POWER FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Dissipation-Max (W)
100
Drain Current-Max (ID) (A)
4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
50