ASI Semiconductor, Inc. FH1100 | 搜芯易Sourcengine

ASI Semiconductor, Inc. FH1100

生命周期状态
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说明
SILICON DIFFUSED DIODE
类别
Semiconductors Diodes Microwave Mixer Diodes MIXER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.60
SB Code
8541.10.00.60

Diode Type
MIXER DIODE
JESD-30 Code
O-LALF-W2
Configuration
SINGLE
JEDEC-95 Code
DO-7
Package Shape
ROUND
Package Style
LONG FORM Meter
Surface Mount
NO
Terminal Form
WIRE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
AXIAL
Number of Elements
1
Number of Terminals
2
Noise Figure-Max (dB)
10
Package Body Material
GLASS
Diode Element Material
SILICON
Forward Voltage-Max (V)
0.55
Diode Capacitance-Max (pF)
1
Rep Pk Reverse Voltage-Max (V)
5
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-65