ONSEMI FGY75N60SMD | 搜芯易Sourcengine

ONSEMI FGY75N60SMD

生命周期状态
EOL
RoHS
符合RoHS标准
说明
ONSEMI - FGY75N60SMD - IGBT Single Transistor, 150 A, 1.9 V, 750 W, 600 V, Power 247, 3 RoHS Compliant: Yes
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (tf)
29 ns
Number of Elements
1
Rise Time-Max (tr)
73 ns
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
76 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
161 ns
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
150 A
Power Dissipation-Max (Abs)
750 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.5 V
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED