Fuji Electric Co., Ltd. FGW75N60HC | 搜芯易Sourcengine

Fuji Electric Co., Ltd. FGW75N60HC

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
1.95
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Fall Time-Max (ns)
180
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
207
Power Dissipation-Max (W)
500
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
275
Turn-on Time-Nom (ton) (ns)
183
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Max (toff) (ns)
915
Turn-off Time-Nom (toff) (ns)
610
Collector Current-Max (IC) (A)
100
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600