FGP5N60UFDTU
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)81
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)10
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)600
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FGP5N60UFDTU