ONSEMI FGL12040WD | 搜芯易Sourcengine

ONSEMI FGL12040WD

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-264 Tube
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.9 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-264AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
GENERAL PURPOSE SWITCHING
Turn-on Time-Nom (ton)
105 ns
Gate-emitter Voltage-Max
25 V
Turn-off Time-Nom (toff)
523 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Collector Current-Max (IC)
80 A
Power Dissipation-Max (Abs)
391 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
8 V
Collector-emitter Voltage-Max
1200 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED