ONSEMI FGH75T65SQDTL4 | 搜芯易Sourcengine

ONSEMI FGH75T65SQDTL4

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT Transistors 650V FS4 Trench IGBT
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
VCEsat-Max (V)
2.1
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Additional Feature
RC-IGBT
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
375
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
80
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
352
Collector Current-Max (IC) (A)
150
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
650