ONSEMI FGH40T65SH_F155 | 搜芯易Sourcengine

ONSEMI FGH40T65SH_F155

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
VCEsat-Max (V)
2.1
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
268
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
51.2
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
85.6
Collector Current-Max (IC) (A)
80
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
7.5
Collector-emitter Voltage-Max (V)
650