FAIRCHILD SEMICONDUCTOR CORP FGH25T120SMD_F155 | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FGH25T120SMD_F155

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IGBT Transistors 1200V, 25A Field Stop Trench IGBT
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
428
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
88
Gate-emitter Voltage-Max (V)
25
Turn-off Time-Nom (toff) (ns)
584
Collector Current-Max (IC) (A)
50
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
7.5
Collector-emitter Voltage-Max (V)
1200