FAIRCHILD SEMICONDUCTOR CORP FGD3N60LSDTM-SB82154 | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FGD3N60LSDTM-SB82154

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-609 Code
e3
Surface Mount
YES
Terminal Finish
MATTE TIN
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
25 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
6 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
40 W
Gate-emitter Thr Voltage-Max
5 V
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30