ONSEMI FGD3040G2-F085V | 搜芯易Sourcengine

ONSEMI FGD3040G2-F085V

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 400V 41A 150W Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
VCEsat-Max (V)
1.85
Case Connection
COLLECTOR
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Fall Time-Max (ns)
15000
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
7000
Power Dissipation-Max (W)
150
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
11000
Turn-on Time-Nom (ton) (ns)
2800
Gate-emitter Voltage-Max (V)
10
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
30000
Turn-off Time-Nom (toff) (ns)
6800
Collector Current-Max (IC) (A)
41
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
2.2
Collector-emitter Voltage-Max (V)
390
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30