ONSEMI FGB3056-F085 | 搜芯易Sourcengine

ONSEMI FGB3056-F085

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 595V 29A 200W Automotive 3-Pin(2+Tab) D2PAK T/R
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AUTOMOTIVE IGNITION
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
VCEsat-Max (V)
1.55
Case Connection
COLLECTOR
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Fall Time-Max (ns)
1800
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
2400
Power Dissipation-Max (W)
200
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
3700
Turn-on Time-Nom (ton) (ns)
1560
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
10000
Turn-off Time-Nom (toff) (ns)
6200
Collector Current-Max (IC) (A)
29
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
2.2
Collector-emitter Voltage-Max (V)
560
Time@Peak Reflow Temperature-Max (s)
30