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FGA6560WDF

ONSEMI

ONSEMI FGA6560WDF
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • VCEsat-Max
    2.3 V
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Application
    POWER CONTROL
  • Turn-on Time-Nom (ton)
    85.6 ns
  • Gate-emitter Voltage-Max
    20 V
  • Turn-off Time-Nom (toff)
    99 ns
  • Operating Temperature-Max
    175 Cel
  • Operating Temperature-Min
    -55 Cel
  • Collector Current-Max (IC)
    120 A
  • Power Dissipation-Max (Abs)
    306 W
  • Transistor Element Material
    SILICON
  • Gate-emitter Thr Voltage-Max
    7.6 V
  • Collector-emitter Voltage-Max
    650 V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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FGA6560WDF
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FGA6560WDF