FGA6530WDF
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明IGBT 650V 60A 176W TO3PN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.3 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationSWITCHING
- Turn-on Time-Nom (ton)40 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)59.2 ns
- Operating Temperature-Max175 Cel
- Operating Temperature-Min-55 Cel
- Collector Current-Max (IC)60 A
- Power Dissipation-Max (Abs)176 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max7.6 V
- Collector-emitter Voltage-Max650 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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FGA6530WDF