ONSEMI FGA60N65SMD | 搜芯易Sourcengine

ONSEMI FGA60N65SMD

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 650V 120A 600W 3-Pin(3+Tab) TO-3P Tube
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (ns)
68
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
70
Power Dissipation-Max (W)
600
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
120
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
650