ONSEMI FGA50N100BNTD2 | 搜芯易Sourcengine

ONSEMI FGA50N100BNTD2

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 1000V 50A 156W 3-Pin(3+Tab) TO-3P Tube
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Fall Time-Max (tf)
100 ns
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
102 ns
Gate-emitter Voltage-Max
25 V
Turn-off Time-Nom (toff)
308 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
50 A
Power Dissipation-Max (Abs)
156 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
7 V
Collector-emitter Voltage-Max
1000 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED