ONSEMI FGA40S65SH | 搜芯易Sourcengine

ONSEMI FGA40S65SH

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IGBT TRENCH/FS 650V 80A TO3PN
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
1.81 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Turn-on Time-Nom (ton)
106.4 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
233.2 ns
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-55 Cel
Collector Current-Max (IC)
80 A
Power Dissipation-Max (Abs)
268 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
7.5 V
Collector-emitter Voltage-Max
650 V