ONSEMI FGA30S120P | 搜芯易Sourcengine

ONSEMI FGA30S120P

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 1300V 60A 348W 3-Pin(3+Tab) TO-3P Tube
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Fall Time-Max (tf)
350 ns
Number of Elements
1
Rise Time-Max (tr)
490 ns
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-emitter Voltage-Max
25 V
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
60 A
Power Dissipation-Max (Abs)
500 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
7.5 V
Collector-emitter Voltage-Max
1300 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED