ONSEMI FGA30N60LSDTU | 搜芯易Sourcengine

ONSEMI FGA30N60LSDTU

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 600V 60A 480W 3-Pin(3+Tab) TO-3P Tube
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
Single
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Fall Time-Max (tf)
2000 ns
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
62 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
2870 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
60 A
Power Dissipation-Max (Abs)
480 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
7 V
Collector-emitter Voltage-Max
600 V