INFINEON TECHNOLOGIES AG FF600R12ME4BOSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FF600R12ME4BOSA1

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans IGBT Module N-CH 1200V 600A 4050W 11-Pin ECONOD-5 Tray
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X7
Configuration
2 Independent
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.1
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
4050
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
310
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
770
Collector Current-Max (IC) (A)
995
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED