INFINEON TECHNOLOGIES AG FF600R12IP4VBOSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FF600R12IP4VBOSA1

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trench and Field Stop IGBT Module
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PUFM-X10
Configuration
2 Independent
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.05
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
10
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
3350
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
370
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
1050
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED