INFINEON TECHNOLOGIES AG FF450R33TE3 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FF450R33TE3

生命周期状态
Active-Unconfirmed
说明
Insulated Gate Bipolar Transistor, 3300V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X10
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3.1
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
10
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
710
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
2170
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
3300
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED