INFINEON TECHNOLOGIES AG FF200R12KE3_B2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FF200R12KE3_B2

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.15
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1050
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
340
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
680
Collector Current-Max (IC) (A)
295
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
IEC-61140; UL RECOGNIZED