Name: FF17MR12W1M1H_B11 by INFINEON TECHNOLOGIES AG
Brand: INFINEON TECHNOLOGIES AG
SKU: FF17MR12W1M1H_B11-145668251534

生命周期状态
Active
说明
Power Field-Effect Transistor, 50A I(D), 1200V, 0.0194ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

Application
SWITCHING
JESD-30 Code
R-XUFM-X25
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
25
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.02
Drain Current-Max (ID) (A)
50
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
1200
Feedback Cap-Max (Crss) (pF)
0.014
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Pulsed Drain Current-Max (IDM) (A)
100
Drain-source On Resistance-Max (ohm)
0.0194
Screening Level / Reference Standard
IEC-60747; IEC-60749; IEC-60068

FF17MR12W1M1H_B11

INFINEON TECHNOLOGIES AG