INFINEON TECHNOLOGIES AG FF150R12MS4GENG | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FF150R12MS4GENG

生命周期状态
Active-Unconfirmed
说明
Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
3.7
Case Connection
ISOLATED
Polarity/Channel Type
N-Channel
Power Dissipation-Max (W)
1250
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
180
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
590
Collector Current-Max (IC) (A)
225
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200