INFINEON TECHNOLOGIES AG FF150R12ME3GBOSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FF150R12ME3GBOSA1

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trench and Field Stop IGBT Module
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X11
Configuration
Half Bridge
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
11
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
400
Turn-off Time-Nom (toff) (ns)
810
Collector Current-Max (IC) (A)
200
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200